REDUCTION TECHNOLOGY OF ELECTRON AND HOLE TRAPPING DENSITIES IN THERMAL SIO2 FILM

被引：0
|
作者：
IWAMATSU, S [1 ]
TARUI, Y [1 ]
机构：
[1] VLSI TECHNOL RES ASSOC,COOPERAT LABS,KAWASAKISHI 213,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C117 / C117
页数：1
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