Preparation of Epoxy/Organoclay Nanocomposites for Electrical Insulating Material Using an Ultrasonicator

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 mu m standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 mu m. The drain current (I-ON), transconductance (g(m)), substrate current (I-SUB), drain to source leakage current (I-OFF), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved I-ON and g(m) characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and I-OFF characteristics.