INTERFACE STUDY IN EPITAXIAL VAPOUR GROWN GAAS

被引：20
|
作者：
HOLLAN, L
HALLAIS, J
SCHILLER, C
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1971年 / 9卷 / 01期
关键词：
D O I：
10.1016/0022-0248(71)90226-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：165 / &
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