ON COUPLING THE DRIFT-DIFFUSION AND MONTE-CARLO MODELS FOR MOSFET SIMULATION

被引：0
|
作者：
PATIL, MB [1 ]
OHKURA, Y [1 ]
TOYABE, T [1 ]
IHARA, S [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 04期
关键词：
D O I：
10.1016/0038-1101(94)00206-U
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：935 / 936
页数：2
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