MECHANISM OF DEFECT-FORMATION IN P-TYPE ZINC-SULFIDE ANNEALED IN SULFUR VAPOR

被引：0
|
作者：
KOTLYAREVSKII, MB
GEORGOBIANI, AN
MIKHALENKO, VN
SOKOLOV, VA
机构：
来源：
ZHURNAL FIZICHESKOI KHIMII | 1980年 / 54卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：345 / 348
页数：4
相关论文
共 50 条
  • [21] p-Type Formation Mechanism of Codoped and Tridoped ZnO Thin Films
    Balakrishnan, L.
    Barman, S. R.
    Gopalakrishnan, N.
    SCIENCE OF ADVANCED MATERIALS, 2013, 5 (05) : 462 - 468
  • [22] BEHAVIOR OF EXCESS Te ATOMS IN UNDOPED p-TYPE CdTe ANNEALED UNDER Te VAPOR PRESSURES.
    Yokota, Katsuhiro
    Yoshikawa, Toshiharu
    Katayama, Saichi
    Ishihara, Shinji
    Kimura, Itsuro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (12): : 1672 - 1677
  • [23] BEHAVIOR OF EXCESS TE ATOMS IN UNDOPED P-TYPE CDTE ANNEALED UNDER TE VAPOR-PRESSURES
    YOKOTA, K
    YOSHIKAWA, T
    KATAYAMA, S
    ISHIHARA, S
    KIMURA, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (12): : 1672 - 1677
  • [24] Defect formation and recombination processes in p-type modulation-doped Si epilayers
    Buyanova, IA
    Chen, WM
    Henry, A
    Ni, WX
    Hansson, GV
    Monemar, B
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 479 - 483
  • [25] Formation and electronic properties of oxygen annealed Au/Ni and Pt/Ni contacts to p-type GaN
    Pettersen, S. V.
    Grande, A. P.
    Tybell, T.
    Riechert, H.
    Averbeck, R.
    Grepstad, J. K.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (03) : 186 - 193
  • [26] Defect formation and recombination processes in p-type modulation-doped Si epilayers
    Buyanova, I.A.
    Chen, W.M.
    Henry, A.
    Ni, W.X.
    Hansson, G.V.
    Monemar, B.
    Materials Science Forum, 1995, 196-201 (pt 1): : 479 - 484
  • [27] Features of radiation-induced defect formation in p-type Si(B,Pt)
    Yunusov, MS
    Karimov, M
    Alikulov, M
    Akhmadaliev, A
    Oksengendler, BL
    Sabirov, SS
    SEMICONDUCTORS, 1997, 31 (06) : 618 - 619
  • [28] Formation and remove mechanism of haze defects on (111) p-type silicon wafers
    Xu, Yuesheng
    Li, Yangxian
    Liu, Caichi
    Ju, Yulin
    Tang, Jian
    Zhu, Zeshao
    Rare Metals, 1994, 13 (01) : 31 - 36
  • [29] Formation and Removement Mechanism of Haze Defects on（111）p－type Silicon Wafers
    徐岳生
    李养贤
    刘彩池
    鞠玉林
    唐建
    朱则韶
    RARE METALS, 1994, (01) : 31 - 36
  • [30] Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaN
    Lee, JL
    Kim, JK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (06) : 2297 - 2302
12345