MONTE-CARLO SIMULATIONS OF CARRIER RELAXATION AND RECOMBINATION IN A-SI-H

被引：2
|
作者：
GUTSCHKER, O
BINDEMANN, R
机构：
[1] Institut für Angewandte Photophysik, Technische Universität Dresden, D-O- 8027 Dresden
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷
关键词：
D O I：
10.1016/S0022-3093(05)80184-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The relaxation and recombination process of photoexcited carriers in a-Si:H has been simulated by Monte-Carlo calculations. By comparison with experimental findings from photoluminescence measurements the applicability of the geminate-pair and the distant-pair recombination model is discussed for different excitation conditions.
引用
收藏
页码：579 / 582
页数：4
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