BROADENING OF DIFFUSION PROFILES IN SILICON UNDER ACTION OF IONIZING-RADIATION

被引：0

作者：

KOIFMAN, AI

NIYAZOVA, OR

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1972年 / 6卷 / 04期

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暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：656 / &

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[1] ON THE ACTION OF IONIZING-RADIATION ON GELATIN
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[4] PATHWAYS OF LEUKEMOGENIC ACTION OF IONIZING-RADIATION
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[8] ISOMERIZATION OF POLYCRYSTALLINE CIS-DIIODODIAMMINEPLATINUM(II) UNDER ACTION OF IONIZING-RADIATION
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[9] PROPERTIES OF IONIZING-RADIATION COUNTERS MADE OF SILICON-CARBIDE DOPED BY DIFFUSION OF BERYLLIUM
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[10] SILICON GATE CMOS ON BULK SILICON FOR IONIZING-RADIATION ENVIRONMENTS
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