EXTREME CRITICAL-TEMPERATURE ENHANCEMENT OF AL BY TUNNELING IN NB/AOX/AL/ALOX/NB TUNNEL-JUNCTIONS

被引：9
|
作者：
BLAMIRE, MG [1 ]
KIRK, ECG [1 ]
EVETTS, JE [1 ]
KLAPWIJK, TM [1 ]
机构：
[1] UNIV GRONINGEN,DEPT APPL PHYS,9747 AG GRONINGEN,NETHERLANDS
来源：
PHYSICA B | 1990年 / 165卷
关键词：
D O I：
10.1016/S0921-4526(09)80377-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Current - voltage measurements on high conductance Nb/AIOx/Al/AlOx/Nb tunnel junction devices show a step in the sub-gap structure corresponding to the difference in the energy gaps V=2(ΔNb-ΔAl) of the two superconductors. The measured ΔAl is large and persists to temperature considerably in excess of the equilibrium critical temperature of the Al. This is interpreted as arising from a tunnel-induced gap enhancement which is an order of magnitude larger than has been seen previously. © 1990, Elsevier Science Publishers B.V. (North-Holland). All rights reserved.
引用
收藏
页码：1583 / 1584
页数：2
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