ENERGY-DEPENDENCE OF THE SPUTTERING YIELD OF GALLIUM-ARSENIDE BY ARGON ION-BOMBARDMENT

被引：0
|
作者：
BHATTACHARYA, SR [1 ]
GHOSE, D [1 ]
BASU, D [1 ]
机构：
[1] SAHA INST NUCL PHYS,BLOCK AF,SECTOR 1,CALCUTTA 700064,INDIA
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1987年 / 25卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：328 / 330
页数：3
相关论文
共 50 条
  • [1] MASS AND ENERGY-DEPENDENCE OF THE SPUTTERING YIELD OF GALLIUM-ARSENIDE
    BHATTACHARYYA, SR
    GHOSE, D
    BASU, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 47 (03): : 253 - 256
  • [2] ENERGY DEPENDENCE OF THE SPUTTERING YIELD OF GALLIUM ARSENIDE BY ARGON ION BOMBARDMENT.
    Bhattacharya, S.R.
    Ghose, D.
    Basu, D.
    Indian Journal of Pure and Applied Physics, 1987, 25 (09): : 328 - 330
  • [3] PHOTOLUMINESCENCE INVESTIGATION OF DISTRIBUTION OF DEFECTS IN GALLIUM-ARSENIDE AFTER ION-BOMBARDMENT
    GAVRILOV, AA
    KACHURIN, GA
    SAFRONOV, LN
    SMIRNOV, LS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 847 - 848
  • [4] SURFACE DAMAGE AND DEPOSITION ON GALLIUM-ARSENIDE RESULTING FROM LOW-ENERGY CARBON ION-BOMBARDMENT
    MEHARG, PFA
    OGRYZLO, EA
    BELLO, I
    LAU, WM
    SURFACE SCIENCE, 1992, 271 (03) : 468 - 476
  • [5] SPUTTERING OF SILICON AND GALLIUM-ARSENIDE WITH MEDIUM ENERGY INTENSE ION-BEAMS OF ARGON AND XENON
    PEARMAIN, K
    VACUUM, 1975, 25 (01) : 3 - 7
  • [6] ENERGY-DEPENDENCE OF PROTON-INDUCED DISPLACEMENT DAMAGE IN GALLIUM-ARSENIDE
    BURKE, EA
    DALE, CJ
    CAMPBELL, AB
    SUMMERS, GP
    STAPOR, WJ
    XAPSOS, MA
    PALMER, T
    ZULEEG, R
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1220 - 1226
  • [7] GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING IN BORON-TRICHLORIDE ARGON MIXTURES
    SCHERER, A
    CRAIGHEAD, HG
    BEEBE, ED
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1599 - 1605
  • [8] SPUTTERING DURING ION-IMPLANTATION INTO GALLIUM-ARSENIDE
    FRITZSCHE, CR
    ROTHEMUND, W
    APPLIED PHYSICS, 1975, 7 (01): : 39 - 44
  • [9] DEPENDENCE OF DEPTH RESOLUTION ON SPUTTERING ION SPECIES AND ENERGY IN AUGER SPUTTER DEPTH PROFILING ANALYSIS OF GALLIUM-ARSENIDE - ALUMINUM ARSENIDE FILMS
    OGIWARA, T
    TANUMA, S
    TAKAKUSAGI, M
    BUNSEKI KAGAKU, 1990, 39 (05) : 277 - 281
  • [10] DEUTERON BOMBARDMENT OF GALLIUM-ARSENIDE FOR DEVICE ISOLATION
    STEEPLES, K
    SAUNDERS, IJ
    SMITH, JG
    ELECTRON DEVICE LETTERS, 1980, 1 (05): : 72 - 74
12345