ABSORPTION AND RESONANT DISPERSION ASSOCIATED WITH NORMAL INCIDENCE INTERSUBBAND TRANSITIONS IN SI/SIGE QUANTUM-WELLS

被引：7

作者：

WU, L ^{[1
]}

BOUCAUD, P ^{[1
]}

LOURTIOZ, JM ^{[1
]}

JULIEN, FH ^{[1
]}

SAGNES, I ^{[1
]}

CAMPIDELLI, Y ^{[1
]}

BADOZ, PA ^{[1
]}

机构：

[1] FRANCE TELECOM, CTR NATL ETUD TELECOMMUN, CNS, F-38243 MEYLAN, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期

关键词：

D O I：

10.1063/1.115247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modulation of midinfrared beam by photoinduced intersubband absorption in undoped Si/SiGe quantum wells is investigated at normal incidence. Optical pumping of interband transitions is used to photocreate carriers in the wells. The modulated transmission of the sample is measured by Fourier transform spectroscopy. Resonant dispersion associated with intersubband transitions as well as interference effects in the quantum well stack are clearly evidenced. It is shown that the phase modulation due to refractive index variations may compensate for amplitude modulation due to absorption. Measurements are well fitted by a phenomenological model. It is also shown that the modulation depth and the wavelength modulation profile both depend on the interband excitation wavelength. This result is attributed to the different nature of photoinduced transitions according to the excitation wavelength. (C) 1995 American Institute of Physics.

引用

页码：3462 / 3464

页数：3

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