GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF HIGHLY STRAINED DEVICE QUALITY INASP/INP MULTIPLE QUANTUM-WELL STRUCTURES

被引：21
|
作者：
HOU, HQ [1 ]
TU, CW [1 ]
CHU, SNG [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期
关键词：
D O I：
10.1063/1.104733
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InAs(x)P(1-x)/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas-source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high-resolution x-ray rocking curve, cross-sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.
引用
收藏
页码：2954 / 2956
页数：3
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