Spintronic devices based on magnetic nanostructures

被引：0
|
作者：
Lutsev, L., V [1 ]
Stognij, A., I [2 ]
Novitskii, N. N. [2 ]
Shulenkov, A. S. [3 ]
机构：
[1] Russian Acad Sci, A Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
[3] Minsk Res Inst Radiomat, Minsk 220074, BELARUS
来源：
FUNCTIONAL MATERIALS | 2012年 / 19卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two types of spintronic devices on the basis of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate, magnetic sensors and magnetically operated field-effect transistor, were studied. Action of magnetic sensors is based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains SiO2(Co) heterostructure under gate. It was found that the magnetic field action leads to significant changes in electron mobility in the channel due to interaction between spins of Co nanoparticles and electron spins.
引用
收藏
页码：33 / 37
页数：5
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