DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION

被引：34

作者：

EDWARDS, JR ^{[1
]}

MARR, G ^{[1
]}

机构：

[1] BELL TEL LABS INC,ALLENTOWN,PA 18103

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 03期

关键词：

D O I：

10.1109/T-ED.1973.17641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：283 / 289

页数：7

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