EFFECT OF ENERGY-DISTRIBUTION OF INTERFACE STATES ON THE CAPACITANCE AND CONDUCTANCE OF SCHOTTKY-BARRIER AND MIS TUNNEL CONTACTS

被引:3
|
作者
RAYCHAUDHURI, B [1 ]
CHATTOPADHYAY, P [1 ]
机构
[1] UNIV CALCUTTA,UNIV COLL SCI,DEPT ELECTR SCI,92 ACHARYA PRAFULLA CHANDRA RD,CALCUTTA 700009,W BENGAL,INDIA
来源
关键词
D O I
10.1002/pssa.2211410141
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:K71 / K75
页数:5
相关论文
共 50 条
  • [41] Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts
    Huang, Lingqin
    Geiod, Rechard
    Wang, Dejun
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
  • [42] THE UNIFIED MODEL FOR SCHOTTKY-BARRIER FORMATION AND MOS INTERFACE STATES IN 3-5 COMPOUNDS
    SPICER, WE
    LINDAU, I
    SKEATH, PR
    SU, CY
    APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 83 - 91
  • [43] MECHANISMS OF BARRIER FORMATION IN SCHOTTKY CONTACTS - METAL-INDUCED SURFACE AND INTERFACE STATES
    MONCH, W
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 128 - 138
  • [44] NONIDEAL J-V CHARACTERISTICS AND INTERFACE STATES OF AN A-SI-H SCHOTTKY-BARRIER
    MAEDA, K
    UMEZU, I
    YOSHIMURA, T
    IKOMA, H
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) : 2858 - 2867
  • [45] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION
    SPICER, WE
    CHYE, PW
    SKEATH, PR
    SU, CY
    LINDAU, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1422 - 1433
  • [46] Microscopic correspondence between Schottky-barrier height and interface morphology at thermally degraded Al/(111)Si contacts
    Miyazaki, S
    Okumura, T
    Miura, Y
    Hirose, K
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995, 1996, 149 : 307 - 312
  • [47] Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
    Farokhnejad, Atieh
    Schwarz, Mike
    Horst, Fabian
    Iniguez, Benjamin
    Lime, Francois
    Kloes, Alexander
    SOLID-STATE ELECTRONICS, 2019, 159 : 191 - 196
  • [48] THE EFFECT OF ELECTRON-IRRADIATION ON INTERFACE STATES OF INP MIS SCHOTTKY DIODES
    PENG, C
    SUN, HH
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (12) : 779 - 782
  • [49] HALL-EFFECT, SCHOTTKY-BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION
    KATODA, T
    SUGANO, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) : 1066 - 1073
  • [50] Measurement of interface states parameters of Si1-x-yGexCy/TiW Schottky contacts using Schottky capacitance spectroscopy
    Zamora, M
    Reeves, GK
    Gazecki, G
    Mi, J
    Yang, CY
    SOLID-STATE ELECTRONICS, 1999, 43 (04) : 801 - 808