PIEZORESISTANCE CONSTANTS OF P-TYPE INSB

被引:25
|
作者
TUZZOLINO, AJ
机构
来源
PHYSICAL REVIEW | 1958年 / 109卷 / 06期
关键词
D O I
10.1103/PhysRev.109.1980
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1980 / 1987
页数:8
相关论文
共 50 条
  • [1] PIEZORESISTANCE OF P-TYPE INSB IN CASE OF MIXED SCATTERING OF HOLES
    VOLKOV, AS
    GALAVANO.VV
    MILORAVA, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (02): : 282 - 282
  • [2] DEPENDENCE OF 4.2 DEGREE K PIEZORESISTANCE OF P-TYPE INSB ON IMPURITY CONCENTRATION
    ALADASHVILI, DI
    GALAVANOV, VV
    OBUKHOV, SA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1349 - 1350
  • [3] PIEZORESISTANCE IN P-TYPE ZNTE
    SAGAR, A
    LEHMANN, W
    PHYSICAL REVIEW, 1965, 140 (3A): : A923 - &
  • [4] PIEZORESISTANCE IN P-TYPE GALLIUM ANTIMONIDE
    TUFTE, ON
    STELZER, EL
    PHYSICAL REVIEW, 1964, 133 (5A): : 1450 - +
  • [5] Piezoresistance in p-type silicon revisited
    Richter, J.
    Pedersen, J.
    Brandbyge, M.
    Thomsen, E. V.
    Hansen, O.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (02)
  • [6] PIEZORESISTANCE IN P-TYPE GALLIUM ANTIMONIDE
    AVEROUS, M
    BONNAFE, J
    CALAS, J
    FAU, C
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 227 - 234
  • [7] PIEZORESISTANCE EFFECT IN P-TYPE PBTE
    BURKE, JR
    PHYSICAL REVIEW, 1967, 160 (03): : 636 - &
  • [8] MECHANISM OF PIEZORESISTANCE IN P-TYPE GE
    OHMURA, Y
    SOLID STATE COMMUNICATIONS, 1991, 79 (12) : 1029 - 1032
  • [9] PIEZORESISTANCE EFFECT IN P-TYPE SI
    OHMURA, Y
    PHYSICAL REVIEW B, 1990, 42 (14): : 9178 - 9181
  • [10] Piezoresistance effect in p-type silicon
    Kanda, Y
    Matsuda, K
    Physics of Semiconductors, Pts A and B, 2005, 772 : 79 - 80