CHEMICAL-VAPOR DEPOSITION OF METALLIC COPPER FILM IN THE PRESENCE OF OXYGEN

被引：12
|
作者：
HAMMADI, Z
LECOHIER, B
DALLAPORTA, H
机构：
[1] GPEC URA-CNRS 783, Faculté des Sciences de Luminy, Case 901 13288 Marseille
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 10期
关键词：
D O I：
10.1063/1.353748
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Chemical-vapor deposition of copper using copper (II) bis(acetylacetonate) is reported. It is shown that at 0.1 Torr and temperatures in the range of 250-350-degrees-C, the deposition occurs only if oxygen is added in the reactor. Auger spectroscopy, x-ray-diffraction, and resistance measurements as a function of temperature lead to the conclusion that metallic copper is deposited.
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页码：5213 / 5215
页数：3
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