DLTS STUDIES OF OXYGEN-CLUSTER DOPED AND PHOSPHORUS-DOPED SILICON IRRADIATED WITH 1.5 MEV ELECTRONS

被引：0

作者：

JELLISON, GE ^{[1
]}

CLELAND, JW ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37830

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：291 / 292

页数：2

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