INFLUENCE OF DEGREE OF IONIC DOPING ON P-TYPE AND N-TYPE REGIONS ON CURRENT-VOLTAGE AND MODULATION CHARACTERISTICS OF A SILICON P-I-N DIODE

被引：0
|
作者：
GUSEV, VM
KURINNYI, VI
KRUGLOV, II
RYZHIKOV, IV
SESTRORE.BV
SINKOV, YA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：759 / &
相关论文
共 50 条
  • [21] PARAMAGNETIC RESONANCE IN N-TYPE AND P-TYPE SILICON
    WILLENBROCK, FK
    BLOEMBERGEN, N
    PHYSICAL REVIEW, 1953, 91 (05): : 1281 - 1281
  • [22] INFLUENCE OF THE CONCENTRATIONS OF SHALLOW AND DEEP CENTERS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF A P-I-N STRUCTURE
    KOMAROVSKIKH, KF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1173 - 1174
  • [23] Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode
    Borblik, V. L.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2021, 24 (04) : 419 - 424
  • [24] Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode
    Borblik, V.L.
    Borblik, V.L. (borblik@isp.kiev.ua), 1600, National Academy of Sciences of Ukraine - Institute of Semiconductor Physics (24): : 419 - 424
  • [25] ELECTROLUMINESCENCE CHARACTERISTICS OF EPITAXIAL GAAS P-N-JUNCTIONS WITH DELIBERATELY COMPENSATED P-TYPE REGIONS AND N-TYPE REGIONS
    ALFEROV, ZI
    ANDREEV, VM
    GARBUZOV, DZ
    ERMAKOVA, AN
    MOROZOV, EP
    TRUKAN, MK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1726 - 1730
  • [26] Investigation of current-voltage characteristics of p-type silicon during electrochemical anodization and application to doping profiling
    Gharbi, Ahmed
    Remaki, Boudjemaa
    Halimaoui, Aomar
    Bensahel, Daniel
    Souifi, Abdelkader
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 784 - 787
  • [27] Influence of Light Ion Irradiation on the Current-Voltage Characteristics of Electrochemical Anodization of p-Type Silicon
    Liu, D. Q.
    Dang, Z. Y.
    Breese, M. B. H.
    Blackwood, D. J.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2014, 161 (05) : E97 - E103
  • [28] Electronic characteristics of n-type nanocrystalline/p-type crystalline silicon heterostructure
    School of Physics and Electronic Information, Wenzhou University, Wenzhou, Zhejiang Province 325027, China
    不详
    不详
    Semicond Sci Technol, 2008, 3 (601-607):
  • [29] Electronic characteristics of n-type nanocrystalline/p-type crystalline silicon heterostructure
    Wei, Wensheng
    Wang, Tianmin
    He, Yuliang
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (06) : 601 - 607
  • [30] ANALYSIS OF CURRENT POTENTIAL CHARACTERISTICS AT N-TYPE AND P-TYPE SEMICONDUCTOR ELECTRODES
    MEISSNER, D
    MEMMING, R
    ELECTROCHIMICA ACTA, 1992, 37 (05) : 799 - 809
12345