共 50 条
- [41] LOW-TEMPERATURE MEASUREMENTS OF THE THERMAL EMF OF HIGHLY DOPED N-TYPE GERMANIUM SOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 11 - 12
- [44] DEEP LEVELS IN N-TYPE SI INTRODUCED BY HIGH-TEMPERATURE GAS ETCHING SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (08): : 932 - 934
- [45] Ohmic contacts to n-type polycrystalline SiC for high-temperature micromechanical applications MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 180 - 185
- [46] High temperature (400°C) performance of ohmic contacts to n-type GaN and GaAs 1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE, 1998, : 114 - 121
- [48] LONGITUDINAL ANISOTROPY OF HIGH-FIELD CONDUCTIVITY OF N-TYPE GERMANIUM AT ROOM TEMPERATURE PHYSICAL REVIEW, 1969, 178 (03): : 1364 - &
- [50] Ambipolar Auger coefficient: measured temperature dependence in electron irradiated and highly injected n-type silicon Journal of Applied Physics, 1997, 81 (05):