REACTIVE AND CHEMICALLY ASSISTED ION-BEAM ETCHING OF SI AND SIO2

被引：7
|
作者：
CARTER, MA
GOLDSPINK, GF
机构：
[1] Middlesex Polytechnic, London, Engl, Middlesex Polytechnic, London, Engl
来源：
VACUUM | 1988年 / 38卷 / 01期
关键词：
D O I：
10.1016/0042-207X(88)90248-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
50
引用
收藏
页码：5 / 10
页数：6
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