PHYSICAL MODELING OF PYROMETRIC INTERFEROMETRY DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF III-V LAYERED STRUCTURES

被引:11
|
作者
LEE, HP
RANALLI, E
LIU, X
机构
[1] Department of Electrical and Computer Engineering, University of California, Irvine, Irvine
关键词
D O I
10.1063/1.115415
中图分类号
O59 [应用物理学];
学科分类号
摘要
A detailed physical model of pyrometric interferometry during molecular beam epitaxy growth of III-V layers is presented. The pyrometric radiation intensity is expressed as spatial convolution of the spontaneous emission rates and the propagation response of the sample. The new formalism, together with empirical modeling of background signal provide a generic framework for implementing a model-reference closed-loop control system for epitaxial growth of multilayer structures. (C) 1995 American Institute of Physics.
引用
收藏
页码:1824 / 1826
页数:3
相关论文
共 50 条
  • [41] MOLECULAR-BEAM EPITAXY OF III-V SEMICONDUCTORS
    WICKS, GW
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1993, 18 (03) : 239 - 260
  • [42] MOLECULAR-BEAM EPITAXIAL-GROWTH OF III-V COMPOUND SEMICONDUCTOR IN THE PRESENCE OF A LOW-ENERGY ION-BEAM - A MONTE-CARLO SIMULATION STUDY
    OGALE, SB
    MADHUKAR, A
    THOMSEN, M
    APPLIED PHYSICS LETTERS, 1987, 51 (11) : 837 - 839
  • [43] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI
    CHYI, JI
    BISWAS, D
    IYER, SV
    KUMAR, NS
    MORKOC, H
    BEAN, R
    ZANIO, K
    LEE, HY
    CHEN, H
    APPLIED PHYSICS LETTERS, 1989, 54 (11) : 1016 - 1018
  • [44] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSE ON GAAS
    REICHOW, J
    GRIESCHE, J
    HOFFMANN, N
    MUGGELBERG, C
    ROSSMANN, H
    WILDE, L
    HENNEBERGER, F
    JACOBS, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 131 (3-4) : 277 - 282
  • [45] MOLECULAR-BEAM EPITAXIAL-GROWTH AND SURFACE-DIFFUSION
    KESSLER, DA
    LEVINE, H
    SANDER, LM
    PHYSICAL REVIEW LETTERS, 1992, 69 (01) : 100 - 103
  • [46] CROSSOVER BEHAVIORS IN A MOLECULAR-BEAM EPITAXIAL-GROWTH MODEL
    RYU, CS
    KIM, IM
    PHYSICAL REVIEW E, 1995, 51 (04): : 3069 - 3073
  • [47] KINETIC PROCESSES IN MOLECULAR-BEAM EPITAXY GROWTH OF III-V MATERIALS
    FOXON, CT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 867 - 869
  • [48] GROWTH OF III-V COMPOUNDS ON VICINAL PLANES BY MOLECULAR-BEAM EPITAXY
    JOYCE, BA
    NEAVE, JH
    ZHANG, J
    VVEDENSKY, DD
    CLARKE, S
    HUGILL, KJ
    SHITARA, T
    MYERSBEAGHTON, AK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (12) : 1147 - 1154
  • [49] MOCVD - A NEW METHOD OF EPITAXIAL-GROWTH OF III-V COMPOUNDS
    BOSE, DN
    BASU, S
    ELECTRONICS INFORMATION & PLANNING, 1981, 8 (06): : 404 - 405
  • [50] EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS USING ORGANOMETALLICS AND HYDRIDES
    HALLAIS, JP
    ACTA ELECTRONICA, 1978, 21 (02): : 129 - 138