A THEORETICAL-STUDY FOR THE BOND LENGTHS IN THE GEXSI1-X ALLOYS

被引：2
|
作者：
XU, ZZ [1 ]
机构：
[1] FUDAN UNIV,DEPT PHYS,SHANGHAI 200433,PEOPLES R CHINA
来源：
SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 07期
关键词：
D O I：
10.1016/0038-1098(94)90375-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The bond lengths for the GexSi1-x alloys are calculated in the empirical tight-binding force model with using a zincblend-like unit cell to simulate the GexSi1-x alloys. The results agree with the experiments quite well, showing that the bond lengths are independent on the alloy composition and close to the Pauling's limit. The failure of the valence force field model in calculating the bond lengths for GexSi1-x alloys is discussed.
引用
收藏
页码：563 / 566
页数：4
相关论文
共 50 条
  • [21] INFRARED ABSORPTION OF LATTICE MODES AND SILICON LOCAL MODE IN GEXSI1-X ALLOYS
    COSAND, AE
    SPITZER, WG
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5241 - &
  • [22] THEORETICAL COMPARISON OF THE STABILITY CHARACTERISTICS OF CAPPED AND UNCAPPED GEXSI1-X STRAINED EPILAYERS
    JAIN, SC
    GOSLING, TJ
    WILLIS, JR
    BULLOUGH, R
    BALK, P
    SOLID-STATE ELECTRONICS, 1992, 35 (08) : 1073 - 1079
  • [23] STUDY OF HOLE MINIBAND TRANSPORT IN GEXSI1-X SI SUPERLATTICE
    KARUNASIRI, RPG
    PARK, JS
    WANG, KL
    YUH, FP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2630 - 2630
  • [24] Hole mobility and diffusion coefficient in strained and relaxed doped GexSi1-x alloys
    Grahn, KJ
    Fu, Y
    Willander, M
    PHYSICA SCRIPTA, 1999, T79 : 174 - 178
  • [25] FORMATION AND DECOMPOSITION OF GEXSI1-X(100)(2X1)-H AND GEXSI1-X(100)(1X1)-2H
    SCHAEFER, JA
    BROUGHTON, JQ
    BEAN, JC
    FARRELL, HH
    PHYSICAL REVIEW B, 1986, 33 (05): : 2999 - 3005
  • [26] REACTIVE ION ETCHING MECHANISM STUDY ON SI/GEXSI1-X
    VANDERDRIFT, E
    ZIJLSTRA, T
    CHEUNG, R
    WERNER, K
    RADELAAR, S
    MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 343 - 348
  • [27] XPS STUDY ON DRY-ETCHING OF SI/GEXSI1-X
    VANDERDRIFT, E
    ZIJLSTRA, T
    FAKKELDIJ, EJM
    CHEUNG, R
    WERNER, K
    RADELAAR, S
    MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) : 481 - 485
  • [28] INSTABILITY OF A GEXSI1-XO2 FILM ON A GEXSI1-X LAYER
    LIU, WS
    CHEN, JS
    NICOLET, MA
    ARBETENGELS, V
    WANG, KL
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) : 4444 - 4446
  • [29] MBE GROWTH OF GEXSI1-X ON POROUS SILICON
    KAO, YC
    CHERN, CH
    NEIH, CW
    JAMIESON, D
    BAI, G
    WU, BJ
    MII, YJ
    WANG, KL
    NICOLET, MA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C543 - C543
  • [30] COMPOSITIONAL MODULATIONS IN GEXSI1-X HETEROEPITAXIAL LAYERS
    FRASER, HL
    MAHER, DM
    KNOELL, RV
    EAGLESHAM, DJ
    HUMPHREYS, CJ
    BEAN, JC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 210 - 213
12345