LIGHT AND CURRENT DEGRADATION OF A-SI-H PIN, NIN AND PIP DIODES DETECTED WITH CPM

被引：0
|
作者：
OSTENDORF, HC [1 ]
KUSIAN, W [1 ]
KRUHLER, W [1 ]
SCHWARZ, R [1 ]
机构：
[1] SIEMENS AG,CORP RES & DEV,MUNICH,GERMANY
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 166卷
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D O I：
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中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Light and current degradation of nin, pip and pin diodes were investigated using CPM and SCLC. We found that degradation can be induced by recombination as well as by hole injection. Excess electrons do not cause any degradation.
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页码：659 / 662
页数：4
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