A SELF-ALIGNED LATERAL BIPOLAR-TRANSISTOR REALIZED ON SIMOX-MATERIAL

被引：21
|
作者：
EDHOLM, B
OLSSON, J
SODERBARG, A
机构：
[1] Department of Electronics Technology, Uppsala University, Uppsala
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期
关键词：
D O I：
10.1109/16.249487
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lateral bipolar transistors, compatible with CMOS process on SOI, have been fabricated on high quality SIMOX-material. A self-aligned nitride spacer technique is used for base width definition and for emitter alignment. Current gains of 40, and high collector-emitter breakdown voltages, have been obtained for transistors with base widths of 4000 Angstrom.
引用
收藏
页码：2359 / 2360
页数：2
相关论文
共 50 条
  • [31] NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR-TRANSISTOR USING A PATTERN-INVERSION METHOD
    TANAKA, S
    MADIHIAN, M
    TOYOSHIMA, H
    HAYAMA, N
    HONJO, K
    ELECTRONICS LETTERS, 1987, 23 (11) : 562 - 564
  • [32] Self-Aligned Coupled Nanowire Transistor
    Kulmala, Tero S.
    Colli, Alan
    Fasoli, Andrea
    Lombardo, Antonio
    Haque, Samiul
    Ferrari, Andrea C.
    ACS NANO, 2011, 5 (09) : 6910 - 6915
  • [33] OPTICAL-DETECTION UP TO 2.5GBIT/S WITH A STANDARD HIGH-SPEED SELF-ALIGNED SILICON BIPOLAR-TRANSISTOR
    BOCK, W
    PRETTL, W
    ELECTRONICS LETTERS, 1988, 24 (13) : 808 - 810
  • [34] SELF-ALIGNED BIPOLAR NPN TRANSISTOR WITH 60NM EPITAXIAL BASE
    BURGHARTZ, JN
    MADER, SR
    MEYERSON, BS
    GINSBERG, BJ
    STORK, JM
    STANIS, C
    SUN, JYC
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 229 - 232
  • [35] BIPOLAR-TRANSISTOR OSCILLATORS FOR MEASUREMENTS OF MATERIAL PARAMETERS
    USANOV, DA
    BEZMENOV, AA
    VAGARIN, AY
    LOGINOV, VM
    SOVIET JOURNAL OF NONDESTRUCTIVE TESTING-USSR, 1982, 18 (04): : 321 - 322
  • [36] SELF-ALIGNED POLYSILICON BIPOLAR TRANSISTOR EMITTER-BASE WINDOW.
    Anon
    IBM technical disclosure bulletin, 1985, 27 (12): : 7182 - 7183
  • [37] A NEW EPITAXIAL LATERAL OVERGROWTH SILICON BIPOLAR-TRANSISTOR
    NEUDECK, GW
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 492 - 495
  • [38] A COLUMN-BASE INP LATERAL BIPOLAR-TRANSISTOR
    TACANO, M
    TAMURA, A
    OIGAWA, K
    UEKUSA, SI
    SUGIYAMA, Y
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 380 - 382
  • [39] NPN CONTROLLED LATERAL INSULATED GATE BIPOLAR-TRANSISTOR
    QIN, ZX
    NARAYANAN, EMS
    ELECTRONICS LETTERS, 1995, 31 (23) : 2045 - 2047
  • [40] A SUPER SELF-ALIGNED SELECTIVELY GROWN SIGE BASE (SSSB) BIPOLAR-TRANSISTOR FABRICATED BY COLD-WALL TYPE UHV CVD TECHNOLOGY
    SATO, F
    TATSUMI, T
    HASHIMOTO, T
    TASHIRO, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) : 1373 - 1378
12345