FORMATION OF CUCL ULTRAFINE PARTICLES IN SILICA GLASS BY ION-IMPLANTATION

被引：16
|
作者：
FUKUMI, K
CHAYAHARA, A
KITAMURA, N
AKAI, T
HAYAKAWA, J
FUJII, K
SATOU, M
机构：
[1] Government Industrial Research Institute, Osaka, Ikeda, Osaka, 563, 1-8-31, Midorigaoka
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 178卷 / pt 2期
关键词：
D O I：
10.1016/0022-3093(94)90279-8
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silica glass dispersed with CuCl ultrafine particles is prepared by the implantation of 3 MeV 6 X 10(16) Cl2+ ions cm(-2) and 3 MeV 6 X 10(16) Cu2+ ions cm(-2). It is deduced that the implanted Cu ions form mainly ultrafine Cu metallic particles in the as-implanted silica glass. The ultrafine Cu metallic particles react with Cl atoms to form CuCl ultrafine particles by heating up to 900-1000 degrees C. The number of Cu and Cl ions forming the CuCl ultrafine particles is consistent with the fluence levels of these ions. A large number of CuCl ultrafine particles can be dispersed in silica glass.
引用
收藏
页码：155 / 159
页数：5
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