ON THE CRYSTAL-STRUCTURE OF THIN CDS FILMS GROWN BY PULSE LASER EVAPORATION

被引：4
|
作者：
KOREN, NN
GREMENOK, VF
KINDYAK, VV
机构：
[1] Acad of Sciences of the Byelorussian, SSR, Inst of Physics of Solids &, Semiconductors, Minsk, USSR, Acad of Sciences of the Byelorussian SSR, Inst of Physics of Solids & Semiconductors, Minsk, US
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 90卷 / 02期
关键词：
SEMICONDUCTING FILMS - Laser Applications;
D O I：
10.1002/pssa.2210900246
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The growth of cadmium sulfide films with a definite structure is important for optics and optoelectronics. We have carried out electron-graphical studies of structures of thin CdS films, obtained by pulse laser epitaxy on the NaCl (100) cleavage plane over a wide range of substrate temperatures from 20 to 450 degree C. In this case the stoichiometry of the initial substance is preserved and it was established that, despite the high rate of evaporation, the degree of perfection of the CdS films depends essentially on the substrate temperature.
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页码：K121 / &
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