INVERTER PERFORMANCE OF 0.10 MU-M CMOS OPERATING AT ROOM-TEMPERATURE

The switching performance of 0.10 mu m CMOS devices operating at room temperature has been discussed on the basis of both experimental and simulated results, The measured propagation delay time of a 0.10 mu m gate length CMOS has been quantitatively divided into intrinsic and parasitic components for the first time, The results have shown that the drain junction capacitance strongly affects the propagation delay time in the present 0.10 mu m CMOS. The switching performance of a 0.10 mu m ground rule CMOS has been simulated by using device parameters extracted from the experimental results, In the 0.10 mu m ground rule CMOS, it has been shown that an increase of the contact resistance will degrade the propagation delay time, which is one of the most essential problems in further device miniaturization. It has been also demonstrated that even if the specific contact resistance rho c is reduced to be less than 1x10(-7) Omega cm(e)(2), further reduction of the gate overlap capacitance C-ov will be required to achieve the propagation delay time to be less than 10 ps in the 0.10 mu m ground rule CMOS at room temperature.