MODIFIED CHARGE-CONTROL MODEL FOR MOS-TRANSISTORS IN PRE-SATURATION REGION

被引：0

|

作者：

KUMAR, U

机构：

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：999 / 1001

页数：3

相关论文

共 50 条

[21] A 4-TRANSISTOR 4-QUADRANT ANALOG MULTIPLIER USING MOS-TRANSISTORS OPERATING IN THE SATURATION REGION
WANG, ZH
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1993, 42 (01) : 75 - 77
[22] AN ANALYTICAL MODEL FOR LIGHTLY DOPED DRAIN MOS-TRANSISTORS
GHARABAGI, R
KHALILI, A
SHOLY, B
INTERNATIONAL JOURNAL OF ELECTRONICS, 1995, 78 (03) : 509 - 517
[23] A MODIFIED METHOD FOR DETERMINATION OF SURFACE MOBILITY OF CARRIERS IN MOS-TRANSISTORS
MAJKUSIAK, B
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (02): : 833 - 836
[24] MODEL FOR THE TURN-OFF BEHAVIOR OF MOS-TRANSISTORS
GRIMMER, F
GOSER, K
ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK, 1972, 26 (05): : 197 - &
[25] CHARGE-CONTROL MODEL OF PIN DIODE
SCHUNEMANN, K
MULLER, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (10) : 1150 - 1158
[26] CHARGE TRANSPORT IN ION-IMPLANTED BURIED CHANNEL MOS-TRANSISTORS
SCHEMMERT, W
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1979, 33 (01): : 23 - 31
[27] CHARGE-CONTROL MODFET MODEL - REPLY
SNOWDEN, CM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 1163 - 1163
[28] CHARGE-CONTROL MODFET MODEL - COMMENTS
BAEK, JH
SHUR, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 1162 - 1163
[29] APPLICATION OF 3-LEVEL CHARGE PUMPING ON SUBMICRONIC MOS-TRANSISTORS
AUTRAN, JL
BALLAND, B
PLOSSU, C
SEIGNEUR, F
GABORIEAU, LM
JOURNAL DE PHYSIQUE III, 1993, 3 (01): : 33 - 45
[30] THE NEED FOR AN EXPLICIT MODEL DESCRIBING MOS-TRANSISTORS IN MODERATE INVERSION
BAGHERI, M
TURCHETTI, C
ELECTRONICS LETTERS, 1985, 21 (19) : 873 - 874

← 1 2 3 4 5 →