OPTIMUM DOPING PROFILES FOR ION-IMPLANTED MESFETS

被引：1
|
作者：
CAZAUX, JL [1 ]
GRAFFEUIL, J [1 ]
PAVLIDIS, D [1 ]
机构：
[1] THOMSON CSF,OAG,F-91401 ORSAY,FRANCE
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1986年 / 21卷 / 02期
关键词：
D O I：
10.1051/rphysap:01986002102013900
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：139 / 149
页数：11
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