OPTIMUM DOPING PROFILES FOR ION-IMPLANTED MESFETS

被引：1

作者：

CAZAUX, JL ^{[1
]}

GRAFFEUIL, J ^{[1
]}

PAVLIDIS, D ^{[1
]}

机构：

[1] THOMSON CSF,OAG,F-91401 ORSAY,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1986年 / 21卷 / 02期

关键词：

D O I：

10.1051/rphysap:01986002102013900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：139 / 149

页数：11

共 50 条

[1] EVALUATION OF DOPING PROFILES IN ION-IMPLANTED PBTE
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