GROWTH OF (GAAS)1-X(GE2)X BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

We report deposition of (GaAs)1-x(Ge2)x on GaAs substrates over the entire alloy range. Growth was performed by metalorganic chemical vapor deposition at temperatures of 675 to 750-degrees-C, at 50 and 760 Torr, using trimethylgallium, arsine, and germane at rates of 2-10 mum/h. Extrinsic doping was achieved using silane and dimethylzinc in hydrogen. Characterization methods include double-crystal x-ray rocking curve analysis, Auger electron spectroscopy, 5K photoluminescence, optical transmission spectra, Hall-effect, and Polaron profiling. Results achieved include an x-ray rocking curve full-width at half maximum as narrow as 12 arc-s, Auger compositions spanning the alloy range from x = 0.03 to x = 0.94, specular surface morphologies, and 5K photoluminescence to wavelengths as long as 1620 nm. Undoped films are n type, with n = 1 x 10(17) cm-3. Extrinsic doping with silane and dimethylzinc have resulted in films which are n type (10(17) to 10(18) cm-3) or p type (5 x 10(18) to 1 x 10(20) cm-3). Mobilities are generally almost-equal-to 50 cm2/V-s and 500 cm2/V-s, for p and n films, respectively.