ATOMIC IMAGE OBSERVATION OF HYDROGEN-SATURATED SI(100) PREPARED BY ATOMIC-HYDROGEN IRRADIATION

被引：4
|
作者：
OKADA, Y
SHIMOMURA, H
KAWABE, M
机构：
[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8A期
关键词：
HYDROGEN TERMINATION OF SI SURFACES; LOW-TEMPERATURE SI PROCESSING; RHEED; SCANNING TUNNELING MICROSCOPE (STM);
D O I：
10.1143/JJAP.31.L1121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic images of hydrogen-saturated Si(100) surface have been successfully observed by scanning tunneling microscope in ultra high vacuum. Prolonged exposures of Si(100) surface to atomic hydrogen irradiation have produced ordered hydrogen-terminated structures such as the (1 x 1) dihydride phase, and the (3 x 1) structure which was comprised of the dihydride and (2 x 1) monohydride phases alternately repeated. Domains of the (3 x 1) phase separated by anti-phase boundaries were also observed on a given (100) terrace.
引用
收藏
页码：L1121 / L1123
页数：3
相关论文
共 50 条
  • [21] INTERACTION OF ATOMIC-HYDROGEN WITH THE SI(100)2X1 SURFACE
    LU, H
    WANG, XD
    BAI, CL
    HASHIZUME, T
    SAKURAI, T
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (02): : 203 - 209
  • [22] OBSERVATION OF SIGNIFICANT OPTICAL GAIN IN INVERTED ATOMIC-HYDROGEN
    TKACH, R
    MAHR, H
    TANG, CL
    HARTMAN, PL
    PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 542 - 543
  • [23] INTERACTION OF ATOMIC-HYDROGEN WITH NATIVE OXIDES ON INP(100)
    PETIT, EJ
    HOUZAY, F
    MOISON, JM
    SURFACE SCIENCE, 1992, 269 : 902 - 908
  • [24] INTERACTION OF ATOMIC-HYDROGEN WITH NATIVE OXIDES ON GAAS(100)
    PETIT, EJ
    HOUZAY, F
    MOISON, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 2172 - 2177
  • [25] KINETICS OF ATOMIC-HYDROGEN PLUS ADSORBED BR REACTIONS ON SI(100) AND SI(111) SURFACES
    KOLESKE, DD
    GATES, SM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 206 : 137 - PHYS
  • [26] KINETICS OF ATOMIC-HYDROGEN PLUS ADSORBED BR REACTIONS ON SI(100) AND SI(111) SURFACES
    KOLESKE, DD
    GATES, SM
    JOURNAL OF CHEMICAL PHYSICS, 1993, 99 (10): : 8218 - 8228
  • [27] MODIFICATION OF RADIATION DEFECTS IN SI STIMULATED BY ATOMIC-HYDROGEN
    KOVESHNIKOV, SV
    NOSENKO, SV
    YAKIMOV, EB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 581 - 583
  • [28] GE GROWTH ON SI USING ATOMIC-HYDROGEN AS A SURFACTANT
    SAKAI, A
    TATSUMI, T
    APPLIED PHYSICS LETTERS, 1994, 64 (01) : 52 - 54
  • [29] LOW DISLOCATION DENSITY GAAS ON SI HETEROEPITAXY WITH ATOMIC-HYDROGEN IRRADIATION FOR OPTOELECTRONIC INTEGRATION
    OKADA, Y
    SHIMOMURA, H
    KAWABE, M
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) : 7376 - 7384
  • [30] ADSORPTION, ABSTRACTION, AND PAIRING OF ATOMIC-HYDROGEN ON SI(100)-(2 X-1)
    WIDDRA, W
    YI, SI
    MABOUDIAN, R
    BRIGGS, GAD
    WEINBERG, WH
    PHYSICAL REVIEW LETTERS, 1995, 74 (11) : 2074 - 2077
12345