ATOMIC IMAGE OBSERVATION OF HYDROGEN-SATURATED SI(100) PREPARED BY ATOMIC-HYDROGEN IRRADIATION

被引：4
|
作者：
OKADA, Y
SHIMOMURA, H
KAWABE, M
机构：
[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8A期
关键词：
HYDROGEN TERMINATION OF SI SURFACES; LOW-TEMPERATURE SI PROCESSING; RHEED; SCANNING TUNNELING MICROSCOPE (STM);
D O I：
10.1143/JJAP.31.L1121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic images of hydrogen-saturated Si(100) surface have been successfully observed by scanning tunneling microscope in ultra high vacuum. Prolonged exposures of Si(100) surface to atomic hydrogen irradiation have produced ordered hydrogen-terminated structures such as the (1 x 1) dihydride phase, and the (3 x 1) structure which was comprised of the dihydride and (2 x 1) monohydride phases alternately repeated. Domains of the (3 x 1) phase separated by anti-phase boundaries were also observed on a given (100) terrace.
引用
收藏
页码：L1121 / L1123
页数：3
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