INVERSION OF THE CONDUCTION OF CDXHG1-XTE FILMS SUBJECTED TO A PLASMA TREATMENT

被引：0
|
作者：
DVURECHENSKII, AV
REMESNIK, VG
RYAZANTSEV, IA
TALIPOV, NK
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：90 / 92
页数：3
相关论文
共 50 条
  • [31] Spontaneous and stimulated emission from CdxHg1-xTe semiconductor films
    Andronov, A. A.
    Nozdrin, Yu. N.
    Okomel'kov, A. V.
    Varavin, V. S.
    Smirnov, R. N.
    Ikusov, D. G.
    SEMICONDUCTORS, 2006, 40 (11) : 1266 - 1274
  • [32] GROWTH OF CDXHG1-XTE SEMICONDUCTOR-FILMS BY ELECTRODEPOSITION TECHNIQUE
    SAHU, SN
    SANCHEZ, C
    SOLID STATE COMMUNICATIONS, 1990, 73 (09) : 597 - 600
  • [33] FEATURES OF LASER PROCESSING OF EPITAXIAL-FILMS OF CDXHG1-XTE
    GNATYUK, VA
    VLASENKO, AI
    DRUZ, BL
    LUKYANENKO, VI
    MOZOL, PE
    SUKACH, AV
    INORGANIC MATERIALS, 1992, 28 (12) : 1956 - 1960
  • [34] THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS
    MULLIN, JB
    IRVINE, SJC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 178 - 181
  • [35] EPITAXIAL CDXHG1-XTE PHOTOVOLTAIC DETECTORS
    BECLA, P
    PAWLIKOWSKI, JM
    INFRARED PHYSICS, 1976, 16 (04): : 457 - 464
  • [36] TWINNING IN CDTE AND CDXHG1-XTE CRYSTALS
    KURILO, IV
    KUCHMA, VI
    INORGANIC MATERIALS, 1982, 18 (04) : 479 - 482
  • [37] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE
    IRVINE, SJC
    MULLIN, JB
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 107 - 115
  • [38] DIFFUSION OF COPPER AND GOLD IN CDXHG1-XTE
    ANDRIEVS.AI
    TEODOROV.AS
    SHNEIDER, AD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1112 - 1112
  • [39] THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE
    CAPPER, P
    JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 280 - 299
  • [40] EXTRINSIC DOPING OF CDXHG1-XTE - A REVIEW
    CAPPER, P
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1989, 19 (04): : 295 - 337
12345