POLARIZED VBXES AND XANES OF GASXSE1-X(X=0, 0.6, 1)

被引:0
|
作者
DRAGER, G
SCHULZ, E
CZOLBE, W
机构
[1] Fachbereich Physik, Martin-Luther-Universität Halle Wittenberg, Halle
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 169卷 / 02期
关键词
D O I
10.1002/pssb.2221690214
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polarized K-emission and absorption spectra of the layered compounds GaSxSe1-x (x = 0, 0.6, 1) are measured in the range of about 10 eV below and above the gap. The polarization dependence of the spectra enables the investigation of the local p-like DOS additionally resolved with respect to the m-quantum number symmetry. By alignment of the energy scales using XPS core orbital energies the experimental spectra can be compared with calculated local partial (l, m-resolved) DOS after Robertson. The spectra are discussed with regard to the calculated DOS and to the structure of the compounds. The polarization dependence of the gap between the Ga K-emission and absorption spectra show's the anisotropic character of chemical binding.
引用
收藏
页码:405 / 415
页数:11
相关论文
共 50 条
  • [21] Sellmeier equations for GaS and GaSe and their applications to the nonlinear optics in GaSxSe1-x
    Kato, Kiyoshi
    Umemura, Nobuhiro
    OPTICS LETTERS, 2011, 36 (05) : 746 - 747
  • [22] DONOR-ACCEPTOR PAIR RECOMBINATION AND PHONON REPLICA IN GASXSE1-X
    MERCIER, A
    VOITCHOVSKY, JP
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (12) : 1411 - 1417
  • [23] Some optical absorption critical points in layered GaSxSe1-x crystals
    Mushinski, V
    Caraman, M
    Lazar, G
    Lazar, I
    PURE AND APPLIED OPTICS, 1998, 7 (03): : 475 - 481
  • [24] OPTICAL AND ELECTRICAL-PROPERTIES OF GASXSE1-X SOLID-SOLUTIONS
    DEBLASI, C
    GALASSINI, S
    MICOCCI, G
    MONGELLI, S
    RIZZO, A
    TEPORE, A
    VASANELLI, L
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1983, 2 (06): : 1775 - 1781
  • [25] Compositional dependence of the Raman lineshapes in GaSxSe1-x layered mixed crystals
    Gasanly, NM
    JOURNAL OF RAMAN SPECTROSCOPY, 2005, 36 (09) : 879 - 883
  • [26] COMPOSITION-DEPENDENT BINDING-ENERGIES IN GASXSE1-X COMPOUNDS
    MARGARITONDO, G
    KATNANI, AD
    MILLIMAN, TE
    LEVY, F
    ABBATI, I
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 445 - 445
  • [27] Influence of the ionizing irradiation on photoelectric properties of GaSxSe1-x solid solutions
    Askerov, KA
    Ismaylov, FI
    17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2003, 5126 : 472 - 474
  • [28] CRITICAL CONCENTRATION AND PHASE-TRANSITION IN GASXSE1-X SOLID-SOLUTIONS
    KYAZYMZADE, AG
    MEKHTIEV, NM
    SAMEDOV, ZS
    TAGIROV, VI
    FIZIKA TVERDOGO TELA, 1984, 26 (04): : 1212 - 1215
  • [29] GASXSE1-X CRYSTALS PHOTOLUMINESCENCE SPECTRA UNDER 2 PHOTONS OPTICAL EXCITATION
    TAGIROV, VI
    DVORNIKOV, DP
    SALMANOV, VM
    SOBEIKH, MA
    IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1977, (02): : 69 - 71
  • [30] RAMAN-SPECTRA AND PHONIC MODES OF MIXED-CRYSTALS GASXSE1-X
    MERCIER, A
    VOITCHOV.JP
    HELVETICA PHYSICA ACTA, 1974, 47 (01): : 18 - 18