THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE

被引：133
|
作者：
RUSSELL, JP [1 ]
GOODMAN, AM [1 ]
GOODMAN, LA [1 ]
NEILSON, JM [1 ]
机构：
[1] RCA CORP,MOUNTAINTOP,PA 18707
来源：
IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 03期
关键词：
D O I：
10.1109/EDL.1983.25649
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：63 / 65
页数：3
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