SCANNING ION MICROSCOPY INVESTIGATION OF SEMICONDUCTOR-DEVICES

被引：0
|
作者：
GONCHOND, JP
MASCARIN, G
JOURDE, E
PANTEL, R
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Submicron CMOS devices have been investigated by Scanning Ion Microscopy using a 30 keV Gallium Focused Ion Beam operated in a SEIKO SMI8300 FIB microscope. Application examples in the fields of Process Monitoring and Failure Analysis of VLSI are described.
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页码：183 / 186
页数：4
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