SCANNING ION MICROSCOPY INVESTIGATION OF SEMICONDUCTOR-DEVICES

被引：0

作者：

GONCHOND, JP

MASCARIN, G

JOURDE, E

PANTEL, R

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Submicron CMOS devices have been investigated by Scanning Ion Microscopy using a 30 keV Gallium Focused Ion Beam operated in a SEIKO SMI8300 FIB microscope. Application examples in the fields of Process Monitoring and Failure Analysis of VLSI are described.

引用

页码：183 / 186

页数：4

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