GAAS/ALGAAS QUANTUM-WELL LASER FOR HIGH-SPEED APPLICATIONS

被引：2
|
作者：
LANG, H
WOLF, HD
KORTE, L
HEDRICH, H
HOYLER, C
THANNER, C
机构：
[1] Siemens AG, Munich
来源：
IEE PROCEEDINGS-J OPTOELECTRONICS | 1991年 / 138卷 / 02期
关键词：
OPTICAL WAVE-GUIDES; LASERS; QUANTUM WELLS;
D O I：
10.1049/ip-j.1991.0021
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs/AlGaAs multiple quantum well ridge waveguide laser diodes have been fabricated using MOVPE and a dry etch process for the ridge structure. The threshold currents of the lasers are 10-15 mA at 25-degrees-C and the characteristic temperature T(o) exceeds 200 K. Modulation bandwidths of up to 14 GHz and relaxation oscillation frequencies of up to 36 GHz are achieved with these devices. The modulation bandwidth exceeds 10 GHz in a temperature range up to 80-degrees-C.
引用
收藏
页码：117 / 121
页数：5
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