THE SINFET - A SCHOTTKY INJECTION MOS-GATED POWER TRANSISTOR

被引：22
|
作者：
SIN, JKO
SALAMA, CAT
HOU, LZ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期
关键词：
D O I：
10.1109/T-ED.1986.22850
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1940 / 1947
页数：8
相关论文
共 50 条
  • [41] The dual gate EST: A new MOS-gated thyristor structure
    Sawant, S
    Sridhar, S
    Baliga, BJ
    ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS, 1996, : 125 - 128
  • [42] Design of MOS-gated bipolar transistors with integral antiparallel diode
    Ajit, JS
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (07) : 344 - 347
  • [43] A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance
    Nandakumar, M.
    Baliga, B.J.
    Shekar, M.S.
    Tandon, S.
    Reisman, Arnold
    Electron device letters, 1991, 12 (05): : 227 - 229
  • [44] A NEW MOS-GATED POWER THYRISTOR STRUCTURE WITH TURN-OFF ACHIEVED BY CONTROLLING THE BASE RESISTANCE
    NANDAKUMAR, M
    BALIGA, BJ
    SHEKAR, MS
    TANDON, S
    REISMAN, A
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) : 227 - 229
  • [45] Comparison of high-voltage 4H-SiC insulated-gate bipolar transistor (IGBT) and MOS-gated bipolar transistor (MGT)
    Zhu, L
    Balachandran, S
    Chow, TP
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 917 - 920
  • [46] SIMFCT: A MOS-gated FCT with high voltage-current saturation
    Sridhar, S
    Baliga, BJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (11) : 2017 - 2021
  • [47] Input and reverse transfer capacitance measurement of MOS-gated power transistors under high current flow
    Deml, C
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2001, 37 (04) : 1062 - 1066
  • [48] MOS-gated three-terminal bi-directional switch
    Dutta, R
    Ajit, JS
    Kinzer, D
    ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, : 213 - 216
  • [49] A new lateral MOS-gated thyristor with controlling base-current
    Sugawara, F
    Aoki, K
    Yamaguchi, H
    Sasaki, K
    Sasaki, T
    Fujisaki, H
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (10) : 483 - 485
  • [50] Novel depletion-mode MOS-gated emitter shorted thyristor
    Zhang, Heming, 2000, Sci Publ House (21):
12345