DETERMINATION OF THE QUANTUM YIELD IN INGAASP/INP DOUBLE HETEROSTRUCTURES USING SPONTANEOUS EMISSION MEASUREMENTS

被引:0
|
作者
RHEINLANDER, B
ANTON, A
HEILMANN, R
OELGART, G
GOTTSCHALCH, V
机构
来源
KVANTOVAYA ELEKTRONIKA | 1988年 / 15卷 / 11期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2218 / 2222
页数:5
相关论文
共 50 条
  • [21] Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures
    Raisky, OY
    Wang, WB
    Alfano, RR
    Reynolds, CL
    Swaminathan, V
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) : 394 - 399
  • [22] Preparation and analysis of laser heterostructures in InGaAsP/GaAs and InGaAsP/InP with wave emission between 0.8 and 1.3 micrometers
    Berishev, IE
    Gorbatchev, AY
    del Castillo, ICH
    Ortiz, MI
    Rodriguez-Pedroza, G
    Mishournyi, VA
    REVISTA MEXICANA DE FISICA, 1998, 44 (03) : 282 - 289
  • [23] DETERMINATION OF TEMPERATURE-DEPENDENT CARRIER LOSSES IN 1.3-MU-M INGAASP/INP DOUBLE-HETEROSTRUCTURES
    RHEINLANDER, B
    HEILMANN, R
    OELGART, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (01): : K113 - K116
  • [24] The Emission Polarization Change in the InGaAsP/InP Nanodimensional Laser Heterostructures under an Ultrasonic Strain
    Kulakova, Liudmila
    INTERNATIONAL CONGRESS ON ULTRASONICS (GDANSK 2011), 2012, 1433 : 515 - 518
  • [25] CHARACTERIZATION OF RADIATIVE EFFICIENCY IN DOUBLE HETEROSTRUCTURES OF InGaAsP/InP BY PHOTOLUMINESCENCE INTENSITY ANALYSIS.
    Komiya, Satoshi
    Yamaguchi, Akio
    Umebu, Itsuo
    1600, (29):
  • [26] PHOTO-LUMINESCENCE STUDY OF PERTURBED GROWTH OF INP ON QUATERNARY LAYERS IN INGAASP-INP DOUBLE HETEROSTRUCTURES
    RAO, EVK
    QUILLEC, M
    BENCHIMOL, JL
    THIBIERGE, H
    APPLIED PHYSICS LETTERS, 1980, 37 (02) : 228 - 231
  • [27] TRANSMISSION ELECTRON-MICROSCOPIC OBSERVATION OF MISFIT DISLOCATIONS IN INP/INGAASP DOUBLE-HETEROSTRUCTURES
    UEDA, O
    KOMIYA, S
    YAMAZAKI, S
    KISHI, Y
    UMEBU, I
    KOTANI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (07): : 836 - 841
  • [28] RECOMBINATION PROCESSES IN INGAASP/INP DOUBLE HETEROSTRUCTURES EMITTING AT LAMBDA=1-1.5-MU
    GARBUZOV, DZ
    AGAEV, VV
    SOKOLOVA, ZN
    KHALFIN, VB
    CHALYI, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 665 - 670
  • [29] Photoelastic waveguides induced by a thin-film composite structure in InGaAsP/InP double heterostructures
    Sun, YJ
    Gao, WS
    Hu, T
    Xing, QJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (04) : 575 - 578
  • [30] 1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP heterostructures
    A. V. Lyutetskii
    N. A. Pikhtin
    S. O. Slipchenko
    Z. N. Sokolova
    N. V. Fetisova
    A. Yu. Leshko
    V. V. Shamakhov
    A. Yu. Andreev
    E. G. Golikova
    Yu. A. Ryaboshtan
    I. S. Tarasov
    Semiconductors, 2003, 37 : 1356 - 1362