EFFECT OF SCREENING OF PIEZOELECTRIC PHONON FIELDS ON ABSORPTION-EDGE BROADENING IN GAAS

被引:4
|
作者
CELLER, GK [1 ]
BRAY, R [1 ]
机构
[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
关键词
D O I
10.1103/PhysRevLett.37.1422
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1422 / 1425
页数:4
相关论文
共 50 条
  • [11] EFFECT OF HYDROSTATIC-PRESSURE ON DIRECT ABSORPTION-EDGE OF GERMANIUM
    WELBER, B
    CARDONA, M
    TSAY, YF
    BENDOW, B
    PHYSICAL REVIEW B, 1977, 15 (02): : 875 - 879
  • [12] LAYER EFFECT AND ABSORPTION-EDGE IN BIOI SINGLE-CRYSTALS
    BORETS, AN
    SHTILIKH.MV
    PUGA, GD
    FIZIKA TVERDOGO TELA, 1973, 15 (01): : 42 - 47
  • [13] SHAPE OF ABSORPTION-EDGE OF AMORPHOUS-GE, SI, INSB, GASB, GAAS, AND GAP
    SZCZYRBOWSKI, J
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1977, 79 (01): : K43 - K48
  • [14] PHONON-GENERATED MICROFIELDS AND HIGH-TEMPERATURE SHIFT OF ABSORPTION-EDGE IN CUBIC ZNS
    BRADA, Y
    YACOBI, BG
    PELED, A
    PHYSICAL REVIEW B, 1975, 12 (08): : 3494 - 3496
  • [15] DIRECT PHONON-ASSISTED TRANSITIONS NEAR THE FUNDAMENTAL ABSORPTION-EDGE IN CUINSE2
    RINCON, C
    GONZALEZ, J
    PEREZ, GS
    BELLABARBA, C
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1983, 2 (06): : 1895 - 1899
  • [16] FINE-STRUCTURE OF THE ZERO-PHONON COMPONENT OF THE ABSORPTION-EDGE OF GALLIUM-PHOSPHIDE
    LUPAL, MV
    PIKHTIN, AN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 471 - 472
  • [17] INFLUENCE OF ELECTRON-PHONON INTERACTION OF PROFILE OF FUNDAMENTAL ABSORPTION-EDGE OF GALLIUM-ARSENIDE
    ALPEROVICH, VL
    KRAVCHENKO, AF
    TEREKHOV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 747 - 748
  • [18] EFFECT OF PHASE-TRANSITIONS ON THE SHAPE OF LEAD HAFNATE ABSORPTION-EDGE
    YAKUBOVSKII, MA
    ZAMETIN, VI
    RABKIN, LM
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1983, 47 (04): : 742 - 745
  • [19] EFFECT OF CHANGES IN BAND-STRUCTURE PARAMETERS ON FUNDAMENTAL ABSORPTION-SPECTRUM OF SEMICONDUCTORS (FUNDAMENTAL ABSORPTION-EDGE OF GAAS1-XPX)
    PIKHTIN, AN
    RAZBEGAEV, VN
    YASKOV, DA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 337 - 341
  • [20] THE EFFECT OF LASER-RADIATION INTENSITY ON THE CDSE INTRINSIC ABSORPTION-EDGE
    KULISH, NR
    MAZNICHENKO, AF
    BULAKH, BM
    UKRAINSKII FIZICHESKII ZHURNAL, 1980, 25 (04): : 666 - 668