共 50 条
- [11] EFFECT OF HYDROSTATIC-PRESSURE ON DIRECT ABSORPTION-EDGE OF GERMANIUM PHYSICAL REVIEW B, 1977, 15 (02): : 875 - 879
- [12] LAYER EFFECT AND ABSORPTION-EDGE IN BIOI SINGLE-CRYSTALS FIZIKA TVERDOGO TELA, 1973, 15 (01): : 42 - 47
- [13] SHAPE OF ABSORPTION-EDGE OF AMORPHOUS-GE, SI, INSB, GASB, GAAS, AND GAP PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1977, 79 (01): : K43 - K48
- [14] PHONON-GENERATED MICROFIELDS AND HIGH-TEMPERATURE SHIFT OF ABSORPTION-EDGE IN CUBIC ZNS PHYSICAL REVIEW B, 1975, 12 (08): : 3494 - 3496
- [15] DIRECT PHONON-ASSISTED TRANSITIONS NEAR THE FUNDAMENTAL ABSORPTION-EDGE IN CUINSE2 NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1983, 2 (06): : 1895 - 1899
- [16] FINE-STRUCTURE OF THE ZERO-PHONON COMPONENT OF THE ABSORPTION-EDGE OF GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 471 - 472
- [17] INFLUENCE OF ELECTRON-PHONON INTERACTION OF PROFILE OF FUNDAMENTAL ABSORPTION-EDGE OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 747 - 748
- [18] EFFECT OF PHASE-TRANSITIONS ON THE SHAPE OF LEAD HAFNATE ABSORPTION-EDGE IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1983, 47 (04): : 742 - 745
- [19] EFFECT OF CHANGES IN BAND-STRUCTURE PARAMETERS ON FUNDAMENTAL ABSORPTION-SPECTRUM OF SEMICONDUCTORS (FUNDAMENTAL ABSORPTION-EDGE OF GAAS1-XPX) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 337 - 341
- [20] THE EFFECT OF LASER-RADIATION INTENSITY ON THE CDSE INTRINSIC ABSORPTION-EDGE UKRAINSKII FIZICHESKII ZHURNAL, 1980, 25 (04): : 666 - 668