共 50 条
- [41] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
- [44] ELECTRICAL CONTACTS TO ION CLEANED N-TYPE GALLIUM-ARSENIDE IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1972, PHP8 (04): : 49 - &
- [46] DEEP TRANSITION-METAL CENTERS IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (09): : 1589 - &