GROWTH OF ORIENTED DIAMOND ON SINGLE-CRYSTAL OF SILICON-CARBIDE (0001)

被引：35
|
作者：
SUZUKI, T
YAGI, M
SHIBUKI, K
机构：
[1] Technical Research Laboratory, Toshiba Tungaloy Co., Ltd., Saiwai-ku, Kawasaki 210
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期
关键词：
D O I：
10.1063/1.111102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Diamond was deposited on a (0001) plane of an alpha-silicon carbide single crystal by the microwave method. The substrate surface was cleaned by pretreatment with hydrogen gas at 1200 degrees C. Cube-octahedral diamond crystals with (111)(D) parallel to(0001)(SiC) were obtained.
引用
收藏
页码：557 / 559
页数：3
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