MOLECULAR-BEAM EPITAXIAL-GROWTH AND INTERFACE CHARACTERISTICS OF GAASSB ON GAAS SUBSTRATES

被引：61
|
作者：
YANO, M
ASHIDA, M
KAWAGUCHI, A
IWAI, Y
INOUE, M
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584716
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：199 / 203
页数：5
相关论文
共 50 条
  • [21] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND ARSINE
    HORIGUCHI, S
    KIMURA, K
    KAMON, K
    MASHITA, M
    SHIMAZU, M
    MIHARA, M
    ISHII, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L979 - L982
  • [22] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF (100) HGSE ON GAAS
    BECKER, CR
    HE, L
    EINFELDT, S
    WU, YS
    LERONDEL, G
    HEINKE, H
    OEHLING, S
    BICKNELLTASSIUS, RN
    LANDWEHR, G
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 331 - 334
  • [23] MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISMS ON THE GAAS(100) SURFACE
    HARBISON, JP
    FARRELL, HH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 733 - 735
  • [24] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS
    MCCOLLUM, MJ
    SZAFRANEK, I
    PLANO, MA
    JACKSON, SL
    STOCKMAN, SA
    STILLMAN, GE
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 14 - 15
  • [25] SELECTIVE EPITAXIAL-GROWTH OF INAS ON GAAS BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    OHATA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1174 - L1176
  • [26] MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATION-HEATED SUBSTRATES
    PALMATEER, SC
    LEE, BR
    HWANG, JCM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 3028 - 3029
  • [27] INCORPORATION BEHAVIOR OF SI ATOMS IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON MISORIENTED (111)A SUBSTRATES
    OKANO, Y
    SHIGETA, M
    SETO, H
    KATAHAMA, H
    NISHINE, S
    FUJIMOTO, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08): : L1357 - L1359
  • [28] EVIDENCE FOR FACETS WITH (210) AZIMUTH IN MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS(001) SUBSTRATES
    BENISTY, H
    BOCKENHOFF, E
    TALNEAU, A
    APPLIED PHYSICS LETTERS, 1992, 60 (16) : 1987 - 1989
  • [29] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF EPITAXIAL GASE FILMS ON (001)GAAS
    KOJIMA, N
    SATO, K
    BUDIMAN, M
    YAMADA, A
    KONAGAI, M
    TAKAHASHI, K
    NAKAMURA, Y
    NITTONO, O
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1175 - 1179
  • [30] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SEMICONDUCTORS
    BACHRACH, RZ
    THIN SOLID FILMS, 1978, 54 (01) : 49 - 49
12345