共 50 条
- [31] INFLUENCE OF GROWTH DEFECTS ON CHANGE IN CONDUCTIVITY OF NEUTRON-IRRADIATED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 940 - 942
- [32] STRUCTURE DEFECTS IN NEUTRON-IRRADIATED SILICON HEAVILY DOPED WITH BORON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (06): : 638 - 641
- [33] POSITRON-ANNIHILATION IN NEUTRON-IRRADIATED P-TYPE SILICON PHYSICAL REVIEW B, 1973, 8 (06): : 2880 - 2886
- [35] Neutron-irradiated Si by positron annihilation CHINESE SCIENCE BULLETIN, 1997, 42 (01): : 26 - 30
- [36] POSITRON LIFETIME IN NEUTRON-IRRADIATED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 159 - 161
- [39] RADIATION DEFECTS IN FAST NEUTRON-IRRADIATED, ELECTRON-IRRADIATED, AND GAMMA-IRRADIATED SILICON PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 100 (01): : K13 - K16
- [40] POSITRON STUDY OF VACANCY DEFECTS IN PROTON AND NEUTRON-IRRADIATED GAP, INP, AND SI PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (01): : 81 - 88