DEPENDENCE OF T0 ON P-CLADDING LAYER DOPING LEVEL IN INGAASP LASERS

被引:6
|
作者
CHEN, TR
CHIU, LC
YU, KL
KOREN, U
HASSON, A
MARGALIT, S
YARIV, A
机构
来源
关键词
D O I
10.1143/JJAP.22.L559
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L559 / L561
页数:3
相关论文
共 50 条
  • [41] Effects of the Stepped-Doped Lower Waveguide and a Doped p-Cladding Layer on AlGaN-Based Deep-Ultraviolet Laser Diodes
    Sajid Ullah Khan
    Sharif Muhammad Nawaz
    Mussaab Ibrahim Niass
    Fang Wang
    Yuhuai Liu
    Journal of Russian Laser Research, 2022, 43 : 370 - 377
  • [43] Relating P-Band SAR Intensity to Biomass for Tropical Dense Forests in Hilly Terrain: γ0 or t0?
    Villard, Ludovic
    Thuy Le Toan
    IEEE JOURNAL OF SELECTED TOPICS IN APPLIED EARTH OBSERVATIONS AND REMOTE SENSING, 2015, 8 (01) : 214 - 223
  • [44] Temperature dependencies of output characteristics of 1.3 μm InGaAsP/InP lasers with different profile of p-doping
    Donetsky, DV
    Belenky, GL
    Shtengel, GE
    Reynolds, CL
    Kazarinov, RF
    Luryi, S
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 423 - 431
  • [45] Role of p-doping profile in InGaAsP multi-quantum well lasers: Comparison of simulation and experiment
    Hybertsen, MS
    Alam, MA
    Shtengel, GE
    Belenky, GL
    Reynolds, CL
    Donetsky, DV
    Smith, RK
    Baraff, GA
    Kazarinov, RF
    Wynn, JD
    Smith, LE
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII, 1999, 3625 : 524 - 534
  • [46] EFFECTS OF ZINC DOPING OF THE ANTIMELTBACK LAYER ON 1. 55- mu m InGaAsP/InP LASERS.
    Feldman, R.D.
    Oron, M.
    Lum, R.M.
    Ballman, A.A.
    Hart, R.M.
    1600, (57):
  • [47] Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP/InP lasers
    Belenky, GL
    Reynolds, CL
    Kazarinov, RF
    Swaminathan, V
    Luryi, S
    Lopata, J
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV, 1996, 2693 : 612 - 621
  • [48] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer
    Iwane, Y.
    Kawashima, F.
    Hirooka, M.
    Saegusa, T.
    Shimomura, K.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, 9 (02): : 210 - 213
  • [49] (P,T0) ANGULAR-DISTRIBUTION WITH DEEP MINIMA AND THE GEOMETRICAL ASPECT OF THE DWBA CALCULATION
    IWASAKI, Y
    KASHY, E
    MARKHAM, RG
    LETTERE AL NUOVO CIMENTO, 1979, 26 (05): : 138 - 142
  • [50] Effects of the Stepped-Doped Lower Waveguide and a Doped p-Cladding Layer on AlGaN-Based Deep-Ultraviolet Laser Diodes
    Khan, Sajid Ullah
    Nawaz, Sharif Muhammad
    Niass, Mussaab Ibrahim
    Wang, Fang
    Liu, Yuhuai
    JOURNAL OF RUSSIAN LASER RESEARCH, 2022, 43 (03) : 370 - 377