Diffusion-controlled transitory creep in binary oxides

被引：0
|
作者：
JimenezMelendo, M [1 ]
DominguezRodriguez, A [1 ]
Castaing, J [1 ]
机构：
[1] CNRS,PHYS MAT LAB,F-92195 MEUDON,FRANCE
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1995年 / 137卷 / 1-4期
关键词：
creep; diffusion; bride; point defect;
D O I：
暂无
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Valuable information about minority point defects in binary oxides can be obtained by using fast temperature (T) and oxygen partial pressure (PO2) changes during high temperature creep deformation. A creep transient is established after a T or PO2 change, which reflects the evolution of the point defect concentration responsible for the diffusion of the slowest species to the new equilibrium value, allowing us the determination of the chemical diffusion coefficient and the migration energy of these defects.
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页码：1449 / 1451
页数：3
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