A DETAILED INVESTIGATION OF THE D-X CENTER AND OTHER TRAP LEVELS IN GAAS-ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：35
|
作者：
DHAR, S [1 ]
HONG, WP [1 ]
BHATTACHARYA, PK [1 ]
NASHIMOTO, Y [1 ]
JUANG, FY [1 ]
机构：
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期
关键词：
D O I：
10.1109/T-ED.1986.22554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：698 / 706
页数：9
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