EXPERIMENTAL AND THEORETICAL ELECTRON MOBILITY OF MODULATION DOPED AlxGa1 - xAs/GaAs HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY.

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作者：
Drummond, T.J. [1 ]
Morkoc, H. [1 ]
Hess, K. [1 ]
Cho, A.Y. [1 ]
机构：
[1] Department of Electrical Engineering, Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801, United States
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| 1600年 / 52期
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